ONSEMI N-Channel Power MOSFET 250V 33A 0.094 Ohm TO-220
ONSEMI N-Channel Power MOSFET, 250V, 33A, 0.094 ohm, TO-220. Ideal for PFC, ATX, and electronic lamp ballasts.
The ONSEMI N-Channel Power MOSFET is a high-voltage UniFET™ device produced using advanced planar stripe and DMOS technology. This MOSFET is specifically tailored to reduce ON-state resistance, providing improved switching performance and higher avalanche energy strength for demanding electronic circuits.
Key Features
- 100% avalanche tested for reliable performance under stress
- Low gate charge: 36.8nC typical
- Low Crss: 39pF typical
- Drain Source Voltage (Vds): 250V
- Continuous Drain Current (Id): 33A
- Drain Source On-State Resistance: 0.094 ohm
- Power Dissipation: 235W
- Gate Source Threshold Voltage Max: 5V
- Rds(on) Test Voltage: 10V
Physical Characteristics
Designed in a TO-220 case style with through-hole mounting, this MOSFET features 3 pins and operates reliably at temperatures up to 150°C. The component measures 43 mm in height, 33 mm in width, and 15 mm in depth, with a lightweight profile of just 2 grams, making it suitable for densely populated circuit boards.
Applications
This MOSFET is highly suitable for switching power converter applications, including power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX power supplies, and electronic lamp ballasts.
- For switching power converters
- For power factor correction (PFC)
- For flat panel display (FPD) TV power
- For ATX power supplies
- Channel Type: N Channel
- Drain Source Voltage (Vds): 250V
- Continuous Drain Current (Id): 33A
- Drain Source On State Resistance: 0.094 ohm
- Transistor Case Style: TO-220
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 5V
- Power Dissipation: 235W
- No. of Pins: 3
- Operating Temperature Max: 150°C
- Gate Charge: 36.8nC typical
- Crss: 39pF typical
- Avalanche Tested: 100%
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- Weight: 2 grams
- of Pins: 3Pins
- SVHC: Lead (25-Jun-2025)
Documents
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