ONSEMI N Channel Power MOSFET 200V 19A 0.17ohm TO-220
ONSEMI N Channel Power MOSFET, 200V, 19A, 0.17ohm, TO-220. Ideal for switched mode power supplies, PFC and lamp ballasts.
The ONSEMI N Channel Power MOSFET is produced using advanced planar stripe and DMOS technology. This QFET® MOSFET technology has been specifically tailored to reduce on-state resistance and to provide high avalanche energy strength, making it highly reliable for demanding electronic applications.
Designed for efficiency and robust performance, this MOSFET features a low gate charge of 40.5nC (typical) and a low Crss of 85pF (typical). It is 100% avalanche tested and supports a gate to source voltage of ±30V, ensuring dependable operation under various conditions. With a thermal resistance of 62.5°C/W from junction to ambient and 0.9°C/W from junction to case, it efficiently manages heat dissipation during operation.
Key Specifications
- Channel Type: N Channel
- Drain Source Voltage (Vds): 200V
- Continuous Drain Current (Id): 19A
- Drain Source On-State Resistance: 0.17 ohm
- Power Dissipation: 139W
- Case Style: TO-220
- Mounting Type: Through Hole
- Dimensions: 43 mm (H) x 33 mm (W) x 15 mm (D)
- Weight: 2.815 g
Applications
This power MOSFET is suitable for use in switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Its through-hole mounting and 3-pin configuration make it straightforward to integrate into your circuit designs.
- For switched mode power supplies
- For active power factor correction (PFC)
- For electronic lamp ballasts
- Channel Type: N Channel
- Drain Source Voltage (Vds): 200V
- Continuous Drain Current (Id): 19A
- Drain Source On State Resistance: 0.17 ohm
- Transistor Case Style: TO-220
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 4V
- Power Dissipation: 139W
- No. of Pins: 3
- Operating Temperature Max: 150°C
- Product Range: QFET Series
- MSL: MSL 1 - Unlimited
- Gate Charge (Typical): 40.5nC
- Crss (Typical): 85pF
- Avalanche Tested: 100%
- Gate to Source Voltage: ±30V
- Thermal Resistance (Junction to Ambient): 62.5°C/W
- Thermal Resistance (Junction to Case): 0.9°C/W
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- Weight: 2.815 grams
- of Pins: 3Pins
- SVHC: Lead (25-Jun-2025)
Always follow local regulations and product guidance.
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