ONSEMI N-Channel Power MOSFET, 100V, 70A, TO-3P

The ONSEMI N-Channel Power MOSFET is a robust through-hole semiconductor device engineered for high-power switching applications. With a drain-source voltage (Vds) rating of 100V and a continuous drain current (Id) of 70A, it is designed to handle significant electrical loads efficiently. Its low drain-source on-state resistance (Rds(on)) of just 0.023Ω minimises power loss and heat generation, contributing to superior energy efficiency in demanding circuits.

Housed in a rugged TO-3P package, this MOSFET offers excellent thermal performance, supporting a maximum power dissipation of 214W. The device is rated for a high operating temperature of up to 175°C, ensuring reliable performance in environments with elevated thermal stress. It features a standard gate-source threshold voltage, making it compatible with common drive circuitry for straightforward integration into existing designs.

Key Specifications

• Channel Type: N-Channel
• Drain-Source Voltage (Vds): 100 V
• Continuous Drain Current (Id): 70 A
• Drain-Source On-State Resistance (Rds(on)): 0.023 Ω (tested at 10V)
• Maximum Gate-Source Threshold Voltage: 2 V
• Maximum Power Dissipation: 214 W
• Package Type: TO-3P (Through-Hole)
• Pin Count: 3 Pins
• Maximum Operating Temperature: 175°C
• Package Dimensions: 43mm (H) x 33mm (W) x 15mm (D)
• Weight: 6 grams

Ideal for engineers and hobbyists, this component is a dependable choice for constructing efficient power supplies, motor controllers, inverters, and audio amplifiers where high current handling and minimal switching losses are critical.