ONSEMI N Channel Logic Level Power MOSFET, SuperSOT, 20V, 1.3A

The ONSEMI N Channel Logic Level Power MOSFET utilises high cell density DMOS technology, specifically tailored to minimise on-state resistance. This very high-density process makes it perfectly suited for low voltage applications where fast switching and low in-line power loss are essential requirements.

Designed to be housed in a very small outline surface mount package, this transistor provides extremely low RDS(ON) alongside robust DC current capability. It is an ideal choice for space-constrained, battery-powered circuits that demand high efficiency and reliable power management.

Key Features

• High density cell design for extremely low RDS(ON)
• Low on-state resistance of 0.16 ohm
• Maximum DC current capability
• Logic level enhancement mode operation
• Compact SuperSOT surface mount package

With a continuous drain current of 1.3A and a drain source voltage of 20V, this power MOSFET delivers consistent and dependable performance. The component measures 43 mm in height, 33 mm in width, and 15 mm in depth, with a lightweight design of just 0.454 grams, making it highly suitable for densely populated circuit boards and compact electronic assemblies.