ONSEMI MMBT5551LT1G NPN High Voltage Transistor 160V 600mA SOT-23 SMD
AEC-Q101 qualified ONSEMI NPN transistor. 160V, 600mA, SOT-23 SMD package. Halogen-free for automotive & industrial use.
The ONSEMI MMBT5551LT1G is an NPN silicon high-voltage transistor engineered for demanding electronic applications that require unique site and control change capabilities. Its robust construction and advanced specifications make it a highly reliable choice for modern circuit design.
This general-purpose transistor is PPAP capable and AEC-Q101 qualified, confirming its suitability for the stringent requirements of automotive and industrial environments. It is also a halogen-free component, aligning with modern environmental and safety standards.
Key Features
- High Voltage Capability: A maximum collector-emitter voltage (VCE) of 160V allows it to handle significant potential differences in circuits.
- Adequate Current Handling: Supports a continuous DC collector current of 600mA, making it suitable for a variety of amplification and switching tasks.
- Surface-Mount Design: Supplied in a compact SOT-23 surface-mount device (SMD) package, ideal for space-constrained PCBs and automated assembly processes.
- Stable Gain: Offers a DC current gain (hFE) of 80, providing consistent amplification performance.
- Wide Temperature Range: Can operate at temperatures up to 150°C, ensuring reliability in challenging thermal conditions.
With a power dissipation rating of 225mW, this bipolar junction transistor (BJT) offers an effective balance of performance and physical size. Its three-pin configuration in the industry-standard SOT-23 case style ensures compatibility with a wide range of circuit layouts and footprints.
- Automotive electronic control units (ECUs)
- Industrial control systems
- General-purpose amplification circuits
- Switching applications in power supplies
- Transistor Type: NPN, Silicon, High Voltage
- Collector-Emitter Voltage (V<sub>CE</sub> max): 160 V
- Continuous Collector Current (I<sub>C</sub>): 600 mA
- Power Dissipation: 225 mW
- DC Current Gain (h<sub>FE</sub>): 80
- Operating Temperature Max: 150 °C
- Package / Case: SOT-23 (Surface Mount)
- Number of Pins: 3
- Product Range: MMBTxxxx Series
- Qualification: AEC-Q101
- Capability: PPAP Capable
- Compliance: Halogen-free
- Dimensions (L x W x H): 15 mm x 33 mm x 43 mm
- Weight: 90 grams
- Polarity: NPN
- Collector Emitter Voltage Max: 160V
- DC Collector Current: 600mA
- Continuous Collector Current: 600mA
- Transistor Case Style: SOT-23
- Transistor Mounting: Surface Mount
- of Pins: 3Pins
- DC Current Gain hFE: 80hFE
- DC Current Gain hFE Min: 80hFE
- SVHC: No SVHC (25-Jun-2025)
Documents
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