ONSEMI MJ15023G PNP Power Transistor TO-3 200V 16A
High-power PNP transistor, 200V, 16A, TO-3 package. Ideal for audio, industrial linear applications. High DC gain, 250W dissipation.
The ONSEMI MJ15023G is a high-power silicon PNP bipolar transistor engineered for demanding linear applications. With a collector-emitter voltage rating of 200V and a continuous collector current of 16A, this through-hole device delivers robust performance for audio amplifiers, disk head positioners, and industrial equipment.
Key Features:
- High DC current gain for efficient signal amplification
- High safe operating area (SOA) for reliable operation under stress
- Collector-base voltage (Vcbo) of 350V
- Emitter-base voltage (Vebo) of 5V
- Transition frequency of 4MHz
- TO-3 metal case style for excellent thermal dissipation
- 250W power dissipation capability
Applications:
- High-power audio systems
- Disk head positioners
- Industrial linear applications
The device is supplied in a TO-3 package with two pins, suitable for through-hole mounting. It operates at temperatures up to 200°C, providing durability in demanding environments. This component is a reliable choice for engineers seeking a high-performance PNP transistor for linear designs.
- High power audio applications
- Disk head positioners
- Industrial linear applications
- Transistor Polarity: PNP
- Collector Emitter Voltage Max: 200V
- Continuous Collector Current: 16A
- Power Dissipation: 250W
- Transistor Case Style: TO-3
- Transistor Mounting: Through Hole
- No. of Pins: 2 Pins
- Transition Frequency: 4MHz
- DC Current Gain hFE Min: 60hFE
- Operating Temperature Max: 200°C
- Weight: 11.5 grams
- Height: 43mm
- Width: 33mm
- Depth: 15mm
- of Pins: 2Pins
- SVHC: Lead (25-Jun-2025)
Documents
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