ONSEMI IGBT Single Transistor, 120A, 650V, TO-3PN
High-power ONSEMI IGBT transistor, 120A, 650V, 600W dissipation in a TO-3PN package. Ideal for motor drives, inverters & UPS.
The ONSEMI IGBT Single Transistor is a high-performance power transistor designed for demanding electronic applications. Combining the high-input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, this IGBT (Insulated-Gate Bipolar Transistor) offers efficient switching and robust performance in power conversion circuits.
With a continuous collector current rating of 120A and a maximum collector-emitter voltage of 650V, this component is built to handle significant power levels. It features a low collector-emitter saturation voltage of 1.9V, which minimises power loss during conduction, improving overall system efficiency. The device has a substantial power dissipation capability of 600W, ensuring reliable operation under high-stress conditions.
Housed in a robust TO-3PN through-hole package, it provides excellent thermal performance and mechanical durability for secure mounting on printed circuit boards (PCBs). The package style is designed for effective heat sinking, which is crucial for managing the 600W power dissipation. With a maximum operating temperature of 175°C, this IGBT is suitable for use in high-temperature environments commonly found in industrial settings.
This transistor is a fundamental component for engineers and technicians designing or repairing inverters, motor drives, uninterruptible power supplies (UPS), welding equipment, and high-power switch-mode power supplies. Its reliable construction and specified electrical characteristics make it an ideal choice for applications requiring efficient control and switching of high currents and voltages.
- Industrial motor drives and controls
- Power inverters and converters
- Uninterruptible power supplies (UPS)
- Switch-mode power supplies (SMPS)
- Continuous Collector Current (Ic): 120A
- Collector-Emitter Saturation Voltage (Vce(sat)): 1.9V
- Power Dissipation (Ptot): 600W
- Maximum Collector-Emitter Voltage (Vces): 650V
- Package / Case Style: TO-3PN
- Number of Pins: 3
- Maximum Operating Temperature: 175°C
- Mounting Type: Through Hole
- Weight: 7.44 grams
- Dimensions (Height x Width x Depth): 43mm x 33mm x 15mm
- Continuous Collector Current: 120A
- Collector Emitter Saturation Voltage: 1.9V
- Power Dissipation: 600W
- Collector Emitter Voltage Max: 650V
- Transistor Case Style: TO-3PN
- of Pins: 3Pins
- Operating Temperature Max: 175°C
- Transistor Mounting: Through Hole
- SVHC: No SVHC (25-Jun-2025)
Documents
Always follow local regulations and product guidance.
Free standard delivery on UK mainland orders. Express delivery options and international shipping available at checkout.
We offer a 30-day money-back guarantee on most products. For faulty items, contact us within 14 days for a replacement or refund.
View Full Delivery & Returns PolicySecure Transactions
We take the utmost care with your payment and personal details. Our website employs advanced encryption technology, including Secure Sockets Layer (SSL), to protect your information during transmission. You can verify a secure connection by looking for 'https' and a locked padlock in your browser.
Cookie Policy
Cookies enhance your shopping experience by keeping track of your basket and remembering you when you return. We also use banner advertising based on your browsing history to present products of potential interest.
Security Warning
Beware of phishing scams! We will never ask for personal details via email. If such information is required, we'll request you to contact us by phone. If you receive an email requesting sensitive information, do not respond and let us know immediately.
Recommended Products
Similar Products
You may like
