ONSEMI FGH60N60SMD IGBT, 120A, 600V, TO-247AB

The ONSEMI FGH60N60SMD is a Field Stop IGBT designed for high current capability and low saturation voltage. With a continuous collector current of 120A and a collector-emitter voltage rating of 600V, this transistor delivers robust performance for demanding power applications.

This IGBT features fast switching, a maximum junction temperature of 175°C, and a tightened parameter distribution, ensuring reliable and consistent operation. The high input impedance and positive temperature coefficient facilitate easy parallel operation, making it a flexible choice for system designs requiring scalability.

Applications

• Power Management
• Alternative Energy
• Communications Networking

Specifications

• Continuous Collector Current: 120A
• Collector Emitter Saturation Voltage: 1.9V (typical)
• Power Dissipation: 600W
• Collector Emitter Voltage Max: 600V
• Transistor Case Style: TO-247AB
• No. of Pins: 3
• Operating Temperature Max: 175°C
• Transistor Mounting: Through Hole

The ONSEMI FGH60N60SMD is a reliable and efficient solution for high-power switching applications, offering excellent thermal performance and ease of use in parallel configurations.