ONSEMI FDV301N N-Channel Digital FET, SOT-23, 25V, 220mA
ONSEMI FDV301N SOT-23 N-channel digital FET. 25V, 220mA, low Rds(on). Ideal for low-voltage & power management circuits.
The ONSEMI FDV301N is a surface-mount, N-channel logic level enhancement mode digital FET presented in a compact SOT-23 package. It is engineered using high cell density DMOS technology, specifically tailored to minimise on-state resistance while maintaining a low gate charge. This design delivers superior switching performance, making it an efficient and reliable component for modern electronic circuits.
A key advantage of this digital FET is its versatility; a single FDV301N can replace multiple different digital transistors that would otherwise require various bias resistor values. This simplifies design and reduces component count on the board. It is ideally suited for a wide range of low-voltage and power management applications where space and efficiency are critical.
Key Specifications & Features
- Package: SOT-23 surface-mount device (SMD).
- Channel Type: N-channel enhancement mode.
- Drain-Source Voltage (Vds): 25V.
- Gate-Source Voltage: 8V.
- Continuous Drain Current (Id): 220mA.
- Power Dissipation (Pd): 350mW.
- Low On-State Resistance: 3.1ohm (typical at Vgs 4.5V).
- Operating Temperature Range: -55°C to +150°C.
With its robust construction and precise electrical characteristics, the FDV301N offers designers a high-performance switching solution that enhances circuit reliability and efficiency.
- Low-voltage applications
- Power management circuits
- Digital switching circuits
- Logic level interfacing
- Channel Type: N Channel
- Drain-Source Voltage (Vds): 25V
- Continuous Drain Current (Id): 220mA
- Power Dissipation (Pd): 350mW
- Drain-Source On-State Resistance: 3.1ohm at Vgs 4.5V
- Gate-Source Voltage: 8V
- Gate-Source Threshold Voltage (Max): 1.06V
- Transistor Case Style: SOT-23
- Mounting Type: Surface Mount
- Number of Pins: 3
- Operating Temperature Range: -55°C to 150°C
- Package Height: 43 mm
- Package Width: 33 mm
- Package Depth: 15 mm
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 4.5V
- Power Dissipation: 350mW
- of Pins: 3Pins
- Operating Temperature Max: 150°C
- SVHC: No SVHC (25-Jun-2025)
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