ONSEMI FDS4559 Dual MOSFET, Complementary N & P Channel, 60V, 4.5A, SOIC
ONSEMI FDS4559 complementary N & P channel MOSFET, 60V 4.5A, low on-resistance, for power management & LCD inverters.
The ONSEMI FDS4559 is a complementary dual MOSFET (N-channel and P-channel) fabricated using the advanced PowerTrench process. This technology is specifically tailored to minimise on-state resistance while maintaining low gate charge, delivering superior switching performance for your power management circuits.
This device is well-suited for applications such as LCD backlight inverters and other power management tasks. With both channels rated at 60V and 4.5A, it provides balanced, reliable operation for a wide range of DC-DC converters, load switches, and other switching circuits.
Key Features & Specifications
- Complementary N and P channel configuration in a single SOIC-8 package (8-pin)
- Drain-source voltage (Vds): 60V for both N and P channels
- Continuous drain current (Id): 4.5A for both N and P channels
- On-state resistance (Rds(on)): 0.055Ω for both channels
- Power dissipation: 2W per channel
- Operating temperature range up to 175°C
- Package style: SOIC
The device’s low on-resistance and low gate charge make it an energy-efficient choice for high-frequency switching. The complementary pair simplifies circuit design by providing both channel types in one package, reducing PCB footprint and component count. Its compact SOIC package is suitable for space-constrained designs.
Whether used in power inverters, motor controllers, or general power management, the FDS4559 delivers consistent, reliable performance. The device is designed for professional electronic assembly and is suitable for a variety of industrial and consumer applications.
- LCD backlight inverters
- Power management applications
- DC-DC converters
- Load switching circuits
- Channel Type: Complementary N and P Channel
- Drain Source Voltage Vds N Channel: 60V
- Drain Source Voltage Vds P Channel: 60V
- Continuous Drain Current Id N Channel: 4.5A
- Continuous Drain Current Id P Channel: 4.5A
- Drain Source On State Resistance N Channel: 0.055Ω
- Drain Source On State Resistance P Channel: 0.055Ω
- Transistor Case Style: SOIC
- No. of Pins: 8 Pins
- Power Dissipation N Channel: 2W
- Power Dissipation P Channel: 2W
- Operating Temperature Max: 175°C
- Weight: 0.209 grams
- Package Height: 43 mm
- Package Width: 33 mm
- Package Depth: 15 mm
- of Pins: 8Pins
- SVHC: No SVHC (25-Jun-2025)
Documents
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