Onsemi FDN5630 N-Channel Power MOSFET 60V 1.7A SuperSOT-3

The Onsemi FDN5630 N-Channel Power MOSFET is a 60V N-channel PowerTrench MOSFET rated at 1.7 A continuous drain current, designed for efficient power switching in modern power electronics.

Overview

The FDN5630 uses a shielded-gate structure for charge balance, which supports low on-state resistance while maintaining a small gate charge (QG). It also features a low reverse recovery charge (Qrr) and a soft recovery body diode, which combine to support fast and efficient synchronous rectification. The device is supplied in a compact surface-mount SuperSOT package suitable for space-constrained PCB layouts.

Key Features

• Soft recovery body diode, which helps to minimise voltage spikes during switching
• Small gate charge (QG) and low reverse recovery charge (Qrr)
• Shielded-gate structure for charge balance
• Surface-mount SuperSOT (3-pin) package

Applications

The MOSFET is intended for high-frequency DC/DC converters, AC/DC power supply designs and general-purpose applications where efficient power switching is required. The soft body diode performance may allow designers to eliminate snubber circuits in some designs, which can simplify the circuit and reduce component count.

Specifications

• Channel Type: N Channel
• Drain-Source Voltage (Vds): 60 V
• Continuous Drain Current (Id): 1.7 A
• Drain-Source On-State Resistance (Rds(on)): 0.1 Ω (tested at 10 V)
• Maximum Gate-Source Threshold Voltage: 2.4 V
• Power Dissipation: 500 mW
• Maximum Operating Temperature: 150°C
• Package / Case Style: SuperSOT (3-pin)
• Mounting Type: Surface Mount

Choose the Onsemi FDN5630 where a compact 60V N-channel MOSFET is needed for efficient switching in high-frequency power designs.