ONSEMI FDN352AP P-Channel MOSFET, 30V 1.3A, SuperSOT
ONSEMI FDN352AP P-Channel logic level MOSFET. 30V, 1.3A, low 0.18Ω RDS(on). Ideal for battery-powered & low-voltage switching.
The ONSEMI FDN352AP is a P-channel logic level MOSFET engineered with advanced Power Trench® technology. This process is specifically tailored to deliver an extremely low on-state resistance while maintaining low gate charge, resulting in superior switching efficiency and performance.
This device is exceptionally well-suited for low-voltage and battery-powered applications where minimising in-line power loss is critical. Its compact SuperSOT surface mount package allows for high-performance solutions in space-constrained designs, making it ideal for modern portable electronics and power management systems.
Key Features & Benefits
- Advanced Power Trench Technology: Provides extremely low RDS(ON) for reduced conduction losses and higher efficiency.
- Logic Level Gate Drive: Ensures compatibility with modern low-voltage microcontroller and logic circuits for easy integration.
- Low Gate Charge: Enables fast switching speeds, which is essential for high-frequency applications, helping to reduce switching losses.
- Compact SuperSOT Package: The small surface-mount footprint saves valuable PCB space in dense electronic assemblies.
- High Reliability: Designed for robust performance with a maximum operating temperature of 150°C, ensuring stability in demanding environments.
With its optimal balance of low resistance and efficient switching, the FDN352AP is a reliable choice for designers looking to enhance power efficiency and extend battery life in their applications.
- Low-voltage DC power circuits
- Battery-powered portable devices
- Power management and load switching
- DC-DC converter modules
- Channel Type: P Channel
- Drain Source Voltage (Vds): 30 V
- Continuous Drain Current (Id): 1.3 A
- Drain Source On-State Resistance (RDS(on)): 0.18 ohm
- Test Voltage for RDS(on): 10 V
- Gate Source Threshold Voltage (Max): 2 V
- Maximum Power Dissipation: 500 mW
- Transistor Case Style: SuperSOT
- Mounting Type: Surface Mount
- Number of Pins: 3 Pins
- Maximum Operating Temperature: 150 °C
- Package Dimensions (L x W x H): 15 mm x 33 mm x 43 mm
- Weight: 3.175 grams
- Drain Source On State Resistance: 0.18ohm
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Power Dissipation: 500mW
- of Pins: 3Pins
- Operating Temperature Max: 150°C
- SVHC: No SVHC (25-Jun-2025)
Documents
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