ONSEMI FDN339AN Power MOSFET, N Channel, 20V, 3A, SOT-23
ONSEMI FDN339AN PowerTrench MOSFET: 20V, 3A, low 0.035 ohm RDS(on). SOT-23 surface mount for efficient power switching.
The ONSEMI FDN339AN is a 20V N-channel PowerTrench® MOSFET engineered to deliver superior switching performance in a compact SOT-23 package. Specifically designed with a 2.5V gate specification, it achieves an exceptionally low on-state resistance (RDS(on)) of just 0.035 ohm while maintaining minimal gate charge. This optimal balance is key for high-efficiency power conversion.
Utilising the latest shielded-gate PowerTrench technology, this component provides excellent charge balance. The advanced design results in a figure of merit (FOM) that is 66% lower than previous generations, translating directly into reduced switching losses and higher overall system efficiency. Its soft recovery body diode performance is a standout feature, helping to minimise voltage spikes in synchronous rectification circuits and potentially eliminating the need for additional snubber circuits.
This MOSFET is a high-performance switch suitable for a broad range of general-purpose applications. It offers robust power and current handling capability within its ratings, making it a reliable choice for designers seeking to optimise their power supply designs.
Key Features & Specifications
- Channel Type: N Channel
- Drain-Source Voltage (Vds): 20 V
- Continuous Drain Current (Id): 3 A
- Drain-Source On-State Resistance (RDS(on)): 0.035 ohm @ Vgs=4.5V
- Gate-Source Threshold Voltage: 1.5 V max
- Package / Case: SOT-23 (Surface Mount)
- Power Dissipation: 500 mW
- Operating Temperature: Up to 150°C
- Technology: Advanced PowerTrench® with shielded-gate structure
- Special Feature: Soft recovery body diode for reduced EMI
- Special Feature: Low gate charge for fast switching
- Synchronous rectification in AC/DC power supplies
- DC-DC converter circuits
- Power switch applications
- Motor drive control circuits
- Channel Type: N Channel
- Drain-Source Voltage (Vds): 20V
- Continuous Drain Current (Id): 3A
- Drain-Source On-State Resistance (RDS(on)): 0.035 ohm
- RDS(on) Test Voltage: 4.5V
- Gate-Source Threshold Voltage Max: 1.5V
- Power Dissipation: 500mW
- Transistor Case Style: SOT-23
- Transistor Mounting: Surface Mount
- No. of Pins: 3 Pins
- Operating Temperature Max: 150°C
- Product Range: PowerTrench Series
- Technology: PowerTrench® shielded-gate structure
- Key Feature: Low gate charge
- Key Feature: Soft reverse recovery body diode
- Weight: 2.27 grams
- Dimensions (LxWxH): 33mm x 15mm x 43mm
- Drain Source On State Resistance: 0.035ohm
- of Pins: 3Pins
- SVHC: No SVHC (25-Jun-2025)
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