Onsemi FDN306P P Channel MOSFET, 12V, 2.6A, SuperSOT, Surface Mount
Onsemi FDN306P P-channel MOSFET: 12V, 2.6A, 0.04 ohm, SuperSOT, surface mount. Ideal for battery power management.
The Onsemi FDN306P is a high-performance P-channel MOSFET that leverages advanced low-voltage PowerTrench® technology. Optimized for battery power management applications, this transistor delivers fast switching and exceptional efficiency in a compact SuperSOT package.
Thanks to its ultra-low on-state resistance (RDS(on)) of just 0.04 ohm, the FDN306P minimizes power losses and heat generation, making it ideal for modern portable and battery-operated devices. The device is designed for surface mounting, ensuring easy integration into automated manufacturing processes.
With a drain-source voltage of 12V and continuous drain current of 2.6A, it suits a wide range of low-voltage power management tasks. The gate-source threshold voltage is kept low (max 600mV), allowing direct control from 1.8V logic, perfect for battery-powered systems.
The MOSFET handles power dissipation up to 500mW and operates reliably up to 150°C. Its 3-pin SuperSOT package is space-saving and RoHS-compliant, with no SVHC substances as of June 2025.
Specifications
- Channel Type: P Channel
- Drain Source Voltage (Vds): 12V
- Continuous Drain Current (Id): 2.6A
- On-State Resistance (RDS(on)): 0.04 ohm
- RDS(on) Test Voltage: 4.5V
- Gate-Source Threshold Voltage (max): 600mV
- Power Dissipation: 500mW
- Transistor Case Style: SuperSOT
- Mounting: Surface Mount
- Pin Count: 3 Pins
- Operating Temperature Max: 150°C
- Technology: PowerTrench®
- Weight: 0.001 g
Packaging Dimensions
- Height: 43mm
- Width: 33mm
- Depth: 15mm
The Onsemi FDN306P is a reliable choice for engineers seeking efficient power management in compact, battery-powered designs.
- Battery power management
- Power management in portable devices
- Low-voltage switching applications
- Fast switching circuits
- Channel Type: P Channel
- Drain Source Voltage (Vds): 12V
- Continuous Drain Current (Id): 2.6A
- Drain Source On-State Resistance: 0.04 ohm
- RDS(on) Test Voltage: 4.5V
- Gate Source Threshold Voltage Max: 600mV
- Power Dissipation: 500mW
- Transistor Case Style: SuperSOT
- Mounting: Surface Mount
- Pin Count: 3 Pins
- Operating Temperature Max: 150°C
- Technology: PowerTrench®
- Weight: 0.001 g
- Height: 43mm
- Width: 33mm
- Depth: 15mm
- Transistor Mounting: Surface Mount
- of Pins: 3Pins
- SVHC: No SVHC (25-Jun-2025)
Documents
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