Onsemi FDC658AP P-Channel MOSFET 30V 4A 0.05 ohm SuperSOT

Onsemi FDC658AP P-Channel MOSFET is a 30 V, 4 A logic-level P-channel MOSFET with an on-state resistance of 0.05 ohm, designed for power management circuits in battery-powered systems.

Overview

The FDC658AP is a single P-channel MOSFET built using the PowerTrench process. Its low drain-source on-state resistance (RDS(ON)) of 0.05 ohm is intended to minimise power loss and heat generation, which supports battery life and overall system efficiency. Its low gate charge is stated to enhance switching performance, making the device suited to high-frequency operation.

Key Features

• Logic-level, single P-channel MOSFET
• PowerTrench process technology
• Drain-source voltage (Vds): 30 V
• Continuous drain current (Id): 4 A
• Drain-source on-state resistance (RDS(ON)): 0.05 ohm
• Maximum operating temperature: 150°C
• Power dissipation rating: 1.6 W
• Low gate charge for enhanced switching performance

Applications

• Battery power management, efficiently controlling power distribution and load switching in portable devices
• Load switching, providing a low-loss switch for connecting and disconnecting loads from a power source
• DC-to-DC conversion, serving as a key element in switch-mode power supplies and voltage regulators

Package and Dimensions

The device is supplied in a compact SuperSOT surface-mount package with 6 pins, which facilitates automated assembly and saves board space in densely packed designs. Listed dimensions are 3.3 (width), 1.5 (depth) and 4.3 (height), with a weight of 0.129 g.

Choose the Onsemi FDC658AP P-Channel MOSFET for battery-powered power management, load switching, and DC-to-DC conversion designs where low on-state resistance and a surface-mount SuperSOT package are required.