ONSEMI FDC604P P-Channel MOSFET 20V 5.5A, SuperSOT
ONSEMI FDC604P P-channel MOSFET. 1.8V logic, 0.033ohm RDS(ON), 5.5A, in SuperSOT package for battery & load switching.
The ONSEMI FDC604P is a high-performance P-channel power MOSFET engineered using an advanced low-voltage PowerTrench® process. It is specified for operation at just 1.8V, making it an exceptionally efficient component for modern, power-sensitive designs. This device is highly optimised for demanding applications such as battery power management, load switching, and protection circuits, where low power loss and high reliability are critical.
A key advantage of this MOSFET is its extremely low on-state resistance (RDS(ON)) of just 0.033ohm at a 4.5V gate drive. This is achieved through the proprietary high-performance Trench technology, which minimises conduction losses and improves overall system efficiency. The component also boasts a fast switching speed, further enhancing its suitability for high-frequency power conversion and switching tasks.
Key Features & Applications
- Optimised for Low Voltage: Specifically designed for 1.8V gate drive, perfect for battery-powered and portable electronics.
- Extremely Low RDS(ON): Delivers minimal power loss and heat generation, maximising battery life and thermal performance.
- Fast Switching: Enables efficient high-frequency operation in power management circuits.
- Robust Construction: Packaged in a compact SuperSOT-6 surface-mount case, suitable for automated PCB assembly and space-constrained layouts.
- High Current Handling: Capable of a continuous drain current (Id) of up to 5.5A.
With a high maximum operating temperature of 150°C and a power dissipation rating of 1.6W, this MOSFET is built for durability and stable performance in challenging environments. Its surface-mount SuperSOT package offers excellent thermal characteristics and a small footprint, making it an ideal choice for modern, compact electronic designs.
- Battery power management circuits
- Load switch applications
- Battery protection systems
- Portable and handheld electronic devices
- Channel Type: P Channel
- Drain-Source Voltage (Vds): 20V
- Continuous Drain Current (Id): 5.5A
- Drain-Source On-State Resistance (RDS(ON)): 0.033ohm
- RDS(ON) Test Voltage: 4.5V
- Gate-Source Threshold Voltage (Max): 700mV
- Transistor Case Style: SuperSOT
- Transistor Mounting: Surface Mount
- Number of Pins: 6 Pins
- Power Dissipation: 1.6W
- Maximum Operating Temperature: 150°C
- Technology: PowerTrench® process
- Weight: 0.086 grams
- Dimensions (L x W x H): 15mm x 33mm x 43mm
- Drain Source On State Resistance: 0.033ohm
- of Pins: 6Pins
- Operating Temperature Max: 150°C
- SVHC: No SVHC (25-Jun-2025)
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