Onsemi BSS84LT1G P-Channel Power MOSFET 50V 130mA SOT-23

Onsemi BSS84LT1G P-Channel Power MOSFET 50V 130mA SOT-23 is a surface-mount P-channel power MOSFET with a 50V drain-source voltage and a continuous drain current of 130mA, supplied in a compact SOT-23 package.

Overview

The BSS84LT1G is designed for power management in electronic circuits. With a drain-source voltage of 50V and a continuous drain current of 130mA, it is suited to DC-DC converters and load switching tasks. The drain-source on-state resistance is 10 ohm at a 5V Rds(on) test voltage, with a power dissipation of 225mW and an operating temperature maximum of 150°C. The surface-mount SOT-23 package supports compact PCB designs and automated assembly.

Key Features

• P-channel MOSFET for high-side switching
• AEC Q101 qualified for automotive use
• PPAP capable for production part approval
• Surface mount SOT-23 package for automated assembly
• Low gate-source threshold voltage (max 2V) simplifies drive circuitry

Applications

The MOSFET is suitable for power management circuits in communication systems, networking equipment, computers, and computer peripherals. The product information also references automotive and industrial applications, as well as battery-powered and energy-sensitive devices.

Specifications

• Channel Type: P Channel
• Drain Source Voltage: 50V
• Continuous Drain Current: 130mA
• Drain Source On State Resistance: 10 ohm
• Transistor Case Style: SOT-23
• Transistor Mounting: Surface Mount
• Rds(on) Test Voltage: 5V
• Gate Source Threshold Voltage Max: 2V
• Power Dissipation: 225mW
• Number of Pins: 3
• Operating Temperature Max: 150°C
• Weight: 0.032 g
• Width: 3.3
• Depth: 1.5
• Height: 4.3

The BSS84LT1G suits engineers designing space-constrained circuits that require P-channel switching. Its listed weight is 0.032 g, and the product data gives a width of 3.3, a depth of 1.5 and a height of 4.3.