ONSEMI BS170 N-Channel Power MOSFET, 60V 500mA, TO-92

The ONSEMI BS170 is an N-channel enhancement mode power MOSFET, engineered with advanced high cell density DMOS technology. This sophisticated manufacturing process is designed to deliver minimal on-state resistance while ensuring rugged, reliable, and fast switching performance, making it an efficient and durable choice for electronic circuits.

This transistor is well-suited for a wide range of applications that require up to 500mA of continuous DC current. It excels in low voltage and low current scenarios, offering precise control for small servo motors, acting as an efficient gate driver for other power MOSFETs, and serving as a robust voltage-controlled switch in various digital and analogue circuits. Its fast switching characteristics enhance performance in pulse-width modulation (PWM) systems.

Key Features & Specifications

• Channel Type: N-Channel
• Drain-Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 500mA
• Drain-Source On-State Resistance (Rds(on)): 5Ω (tested at 10V)
• Gate-Source Threshold Voltage: Maximum of 2.1V
• Maximum Power Dissipation: 830mW
• Package Type: Industry-standard TO-92 through-hole
• Pin Count: 3 pins for easy integration
• Wide Operating Temperature: Up to 150°C

With its compact TO-92 package, the BS170 is straightforward to implement on printed circuit boards (PCBs) using traditional soldering techniques. Its combination of electrical efficiency, thermal performance, and switching speed makes it a fundamental and reliable component for hobbyists, engineers, and product developers building robust electronic systems.