ONSEMI Bipolar (BJT) Single Transistor NPN 140V 20A 250W TO-3

The ONSEMI Bipolar (BJT) Single Transistor is a robust power transistor specifically designed for high-power audio applications, disk head positioners, and various other linear applications. Engineered for performance, this NPN transistor features a high safe operating area and high DC current gain, making it an ideal choice for low distortion complementary designs.

With a maximum collector-emitter voltage of 140V and a continuous collector current of 20A, this component delivers reliable power dissipation of up to 250W. These specifications ensure it can handle demanding loads with consistent performance. The junction-to-case thermal resistance is rated at 0.70°C/W, ensuring efficient heat management and sustained operation even under significant thermal stress.

Housed in a classic TO-3 case style, this through-hole mounted transistor includes 2 pins and offers a transition frequency of 2MHz. It boasts a minimum DC current gain (hFE) of 150 and can operate at temperatures up to 200°C. The component measures 43 mm in height, 33 mm in width, and 15 mm in depth, with a weight of 11.793 grams, providing a substantial and durable build for your electronic projects.