ONSEMI BDX53CG NPN Darlington Transistor TO-220
NPN Darlington transistor from ONSEMI, 100V, 8A, 65W, TO-220 package for industrial and power switching.
The ONSEMI BDX53CG is a robust NPN bipolar medium-power Darlington transistor, engineered for general-purpose and low-speed switching applications. Its monolithic construction integrates built-in base-emitter shunt resistors, ensuring stable performance and reduced component count in your circuits. This complementary device is designed for industrial and power management roles, offering a balanced combination of power handling and switching efficiency.
With a collector-emitter voltage of 100V, a power dissipation of 65W, and a DC collector current of 8A, this transistor is well-suited for demanding tasks. The DC current gain of 750hFE provides reliable amplification and switching capabilities. Housed in a standard TO-220 package with three pins, it is designed for through-hole mounting, simplifying assembly and heat sinking. The device operates reliably up to a maximum temperature of 150°C, making it a dependable choice for various environments.
Key Features
- NPN bipolar medium-power Darlington configuration.
- Monolithic construction with built-in base-emitter shunt resistors.
- Complementary device pairing for balanced circuit design.
- High current gain (hFE: 750) for efficient control.
- Through-hole TO-220 package for easy PCB integration.
Typical Applications
- Industrial control systems
- Power management circuits
- General-purpose switching loads
This transistor delivers reliable performance and is a practical choice for engineers and hobbyists alike.
- Industrial applications
- Power management circuits
- General-purpose low-speed switching
- Transistor Type: NPN Bipolar Medium-Power Darlington
- Construction: Monolithic with built-in base emitter shunt resistors
- Complementary Device: Yes
- Polarity: NPN
- Collector Emitter Voltage (V(br)ceo): 100V
- Power Dissipation (Pd): 65W
- DC Collector Current: 8A
- DC Current Gain (hFE): 750
- Case Style: TO-220
- Pin Count: 3 Pins
- Mounting Type: Through Hole
- Maximum Operating Temperature: 150°C
- Weight: 2 grams
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- RF Transistor Case: TO-220
- of Pins: 3Pins
- Transistor Mounting: Through Hole
- Operating Temperature Max: 150°C
- SVHC: No SVHC (25-Jun-2025)
Documents
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