ONSEMI BC858 PNP General Purpose Transistor, SOT-23, 30V 100mA
AEC-Q101 qualified ONSEMI BC858 PNP transistor in SOT-23 package. 30V, 100mA for general purpose switching & linear circuits.
The ONSEMI BC858CLT1G is a PNP general purpose bipolar junction transistor (BJT) engineered for reliable performance in linear amplification and switching applications. Housed in a compact SOT-23 package, it is specifically designed for lower power surface-mount technology (SMT) assemblies, making it an ideal component for space-constrained PCB designs.
This device is AEC-Q101 qualified and PPAP capable, meeting stringent standards for reliability in demanding environments. This makes it suitable for a wide range of professional and industrial applications where consistent performance is critical.
Key Specifications & Features
- Transistor Polarity: PNP
- Maximum Collector-Emitter Voltage (VCEO): 30V
- Continuous Collector Current: 100mA
- Power Dissipation: 225mW
- DC Current Gain (hFE): 100 (Minimum)
- Transition Frequency: 100MHz
- Maximum Operating Temperature: +150°C
- Package / Case Style: SOT-23 (3-Pin)
- Mounting Type: Surface Mount
With its robust electrical characteristics and industry-standard qualification, the BC858CLT1G provides a dependable solution for circuit designers needing a general-purpose PNP transistor.
- Linear amplification circuits
- General purpose switching applications
- Industrial control systems
- Power management circuits
- Transistor Polarity: PNP
- Maximum Collector-Emitter Voltage (VCEO): 30V
- Collector-Emitter Breakdown Voltage (VBR)CEO: 30V
- DC / Continuous Collector Current: 100mA
- Maximum Power Dissipation: 225mW
- DC Current Gain (hFE): 100 (Minimum)
- Transition Frequency: 100MHz
- Maximum Operating Temperature: +150°C
- Package / Case Style: SOT-23
- Mounting Type: Surface Mount
- Number of Pins: 3
- Qualification: AEC-Q101
- PPAP Capable: Yes
- Product Range: BCxxx Series
- Collector Emitter Voltage V(br)ceo: 30V
- DC Collector Current: 100mA
- Continuous Collector Current: 100mA
- Power Dissipation: 225mW
- Transistor Case Style: SOT-23
- Transistor Mounting: Surface Mount
- of Pins: 3Pins
- DC Current Gain hFE Min: 100hFE
- Operating Temperature Max: 150°C
- SVHC: No SVHC (25-Jun-2025)
Documents
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