Onsemi SI4435DY P-Channel Power MOSFET, 30V, 8.8A, SOIC-8

The Onsemi SI4435DY P-Channel Power MOSFET is a 30 V P-channel device rated for a continuous drain current of 8.8 A, supplied in a compact SOIC-8 surface-mount package.

Overview

The SI4435DY is built on the latest medium-voltage PowerTrench technology and is optimised for use as a power switch. It combines a small gate charge (QG), low reverse recovery charge (Qrr) and a soft reverse recovery body diode, a combination intended to support fast switching in synchronous rectification circuits within AC/DC power supplies.

Key Features

• Shielded-gate structure providing charge balance
• Low on-state resistance, with RDS(on) of 0.015 ohm when tested at 10 V
• Small gate charge combined with low reverse recovery charge
• Soft body diode performance, which may help reduce the need for snubber circuits
• Reduced voltage spikes during synchronous rectification
• Gate-source threshold voltage of 1.7 V (maximum)

Applications

• Power switching applications
• Fast switching in synchronous rectification circuits
• AC/DC power supplies

Specifications

• Channel type: P-channel
• Drain-source voltage (Vds): 30 V
• Continuous drain current (Id): 8.8 A
• Power dissipation: 2.5 W
• Maximum operating temperature: 175°C
• Package: SOIC (8 pins), surface mount
• Dimensions: 4.3 mm (H) x 3.3 mm (W) x 1.5 mm (D)
• Weight: 0.215 g

The compact surface-mount SOIC-8 package and 30 V, 8.8 A rating make the Onsemi SI4435DY P-Channel Power MOSFET suitable for power switching designs that call for low on-state resistance and efficient switching performance.