Onsemi RFP50N06 N-Channel Power MOSFET 60V 50A TO-220AB

Onsemi RFP50N06 N-Channel Power MOSFET is a 60V, 50A power MOSFET in a TO-220AB through-hole package, designed for high-power switching applications.

Overview

The RFP50N06 is an N-channel power MOSFET built using the MegaFET process. This process uses silicon feature sizes similar to those found in LSI integrated circuits. It is intended as a high-power switching component for demanding electronic applications where reliability and efficiency are important.

Key Features

• Voltage and Current: Rated for a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 50A.
• Low On-State Resistance: Drain-source on-state resistance (Rds(on)) of 0.022Ω at a 10V test voltage, which minimises power loss and heat generation during operation.
• Power Handling: Power dissipation of up to 131W, with a maximum rated junction temperature of 175°C.
• Direct IC Drive: Can be operated directly from most integrated circuit outputs, which simplifies circuit design.
• Through-Hole Package: Supplied in a TO-220AB package with 3 pins for through-hole mounting on printed circuit boards (PCBs) or heatsinks.

Applications

This MOSFET is suited to high-efficiency switching applications, including switching regulators and converters such as DC-DC converters, SMPS (Switch-Mode Power Supplies), and voltage regulation circuits. It can also be used for motor drive control, including brushed DC motors and stepper motors, and for relay and solenoid drivers that provide a solid-state switching solution for inductive loads.

Dimensions and Weight

• Width: 3.3
• Depth: 1.5
• Height: 4.3
• Weight: 2 g

Choose the Onsemi RFP50N06 N-Channel Power MOSFET when you need a 60V, 50A switching component in a TO-220AB through-hole package.