ON Semiconductor MMBF170LT1G N-Channel Power MOSFET, 60V, 500mA, SOT-23

The ON Semiconductor MMBF170LT1G is a high-quality N-channel Power MOSFET designed for a wide range of switching and amplification applications. With a drain-source voltage of 60V and a continuous drain current of 500mA, this component delivers reliable performance in compact, space-constrained designs.

The transistor features a low drain-source on-state resistance of 5 ohms (at a test voltage of 10V), ensuring efficient power handling and reduced losses. It is housed in a space-saving SOT-23 package, ideal for surface-mount assembly processes. With a power dissipation of 225mW and an operating temperature range up to 150°C, this MOSFET is built to perform under demanding conditions.

This component is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications where high reliability and traceability are critical. The gate-source threshold voltage is a maximum of 3V, allowing for easy drive from low-voltage logic levels.

Key Features

• N-channel power MOSFET
• Drain-source voltage: 60V
• Continuous drain current: 500mA
• Drain-source on-state resistance: 5 ohm
• Transistor case style: SOT-23
• Surface-mount package
• Power dissipation: 225mW
• AEC-Q101 qualified, PPAP capable
• Operating temperature up to 150°C
• 3-pin configuration

The ON Semiconductor MMBF170LT1G is an excellent choice for engineers and designers seeking a dependable MOSFET for automotive, industrial, or consumer electronic circuits.