ON Semiconductor MJ11016G Darlington Transistor, NPN, 120V, TO-3 Case

The ON Semiconductor MJ11016G is a high-performance silicon NPN bipolar Darlington power transistor engineered for robust output applications. It is specifically designed for use as an output device in complementary general-purpose amplifier circuits, offering reliable operation and high power handling. This transistor features a monolithic construction with a built-in base-emitter shunt resistor, simplifying circuit design and enhancing stability.

A key specification is its high DC current gain (hFE) of 200, which allows for effective signal amplification with minimal input current. It is built to withstand high voltages, with a collector-base voltage (Vcbo) of 120V and an emitter-base voltage (Vebo) of 5V. With a substantial power dissipation (Pd) rating of 200W and a DC collector current capability of 30A, this component is suited for demanding industrial environments.

The device is housed in a classic TO-3 metal case, known for its excellent thermal performance and durability. It features a through-hole mounting style with two pins for secure soldering onto printed circuit boards. Its maximum operating temperature extends to 200°C, ensuring reliable function in high-heat applications common in power supplies, motor controllers, and audio amplifiers.

Key Features:

• High-power Darlington configuration for efficient amplification.
• Monolithic design with integrated base-emitter resistor.
• Excellent thermal characteristics due to the TO-3 metal package.
• Suitable for through-hole PCB mounting for a strong mechanical and electrical connection.

This transistor is a fundamental component for engineers and technicians building or repairing power electronics where durability, high current gain, and thermal resilience are critical.