ON Semiconductor FOD817DSD Phototransistor Optocoupler, 1 Channel, 5kV, 300-600

The ON Semiconductor FOD817DSD is a high-quality phototransistor output optocoupler, designed for reliable signal isolation in a wide range of electronic applications. This component features two gallium arsenide infrared emitting diodes connected in inverse parallel, driving a silicon phototransistor output. It provides a current transfer ratio of 300% to 600% and a high input-output isolation voltage of 5000Vrms, ensuring robust performance and safety in your circuits.

With a minimum collector-emitter breakdown voltage (BVCEO) of 70V guaranteed, this optocoupler is suitable for demanding environments. The component is applicable for Pb-free IR reflow soldering, making it ideal for modern, environmentally conscious manufacturing processes. Its surface mount DIP package with 4 pins allows for efficient PCB assembly.

Key Features

• High Isolation: 5000Vrms input-output isolation voltage ensures safe signal transfer.
• Wide CTR Range: 300% to 600% current transfer ratio for design flexibility.
• Robust Output: Minimum BVCEO of 70V guarantees reliable operation.
• Pb-Free Compatible: Suitable for Pb-free IR reflow soldering processes.
• Compact Design: Surface mount DIP package with 4 pins for space-saving layouts.

Applications

This optocoupler is ideal for a variety of applications including: sensing, instrumentation, communications networking, and power management. Whether you are designing industrial controls or consumer electronics, the FOD817DSD provides dependable isolation and signal integrity.