ON Semiconductor FDN340P P-Channel MOSFET, 20V, 2A, SOT-23

The FDN340P from ON Semiconductor is a single P-channel, 2.5V specified PowerTrench MOSFET housed in a compact SOT-23 package. This MOSFET leverages the PowerTrench process to minimize on-state resistance while maintaining low gate charge, delivering superior switching performance for a wide range of applications.

Designed for portable electronics, load switching, power management, battery charging circuits, and DC-to-DC conversion, the FDN340P offers a drain-to-source voltage of -20V, a continuous drain current of -2A, and an on-resistance of just 82mOhm at Vgs -2.5V. The typical gate charge is low at 7.2nC, enhancing efficiency.

Key Features:

• High-performance trench technology for extremely low Rds(on)
• Low gate charge (typical 7.2 nC)
• Drain-to-source voltage: -20V
• Gate-to-source voltage: ±8V
• Continuous drain current: -2A
• Power dissipation: 500mW
• Operating junction temperature range: -55°C to 150°C
• On-resistance: 82mOhm at Vgs -2.5V
• Case style: SOT-23
• Mounting: Surface mount
• Number of pins: 3

Ideal for compact, power-sensitive designs, the FDN340P ensures reliable and efficient operation in your electronic circuits.