Onsemi BS170 N-Channel MOSFET 60V 500mA TO-226AA

The Onsemi BS170 is an N-channel enhancement-mode MOSFET rated at 60V drain-source voltage and a continuous drain current of 500mA, making it suited to low voltage, low current switching applications.

The BS170 is built using high cell density DMOS technology. Its advanced design is intended to minimise ON-state resistance, supporting efficient operation while providing rugged, reliable and fast switching capabilities. As a voltage-controlled small signal switch, it is suited to electronic circuits where precision and efficiency are important, including power MOSFET gate drivers and other switching applications.

Key Features

• N-channel enhancement-mode MOSFET
• High cell density DMOS technology
• Low RDS(on) for reduced power loss
• Drain-source voltage (Vds): 60V
• Continuous drain current (Id): 500mA
• Maximum power dissipation: 830mW
• Maximum operating temperature: 150°C
• High saturation current capability

Package and Mounting

The BS170 is housed in a compact TO-226AA through-hole package, making it straightforward to integrate into a range of circuit boards with a stable and secure physical connection. It is supplied on tape and reel for automated assembly processes.

Dimensions and Weight

Width: 3.3, depth: 1.5, height: 4.3. Weight: 0.713 gm.

Choose the Onsemi BS170 when a compact through-hole N-channel MOSFET rated at 60V and 500mA is needed for low power switching in electronic circuits.