Nexperia SMD N Channel MOSFET 30V 6A TO-236AB

Nexperia SMD N Channel MOSFET 30V 6A TO-236AB is a surface-mount N channel enhancement mode field-effect transistor with a 30V drain-source voltage rating and a 6A continuous drain current, housed in a compact SOT23 (TO-236AB) plastic package.

Overview

This MOSFET uses Trench MOSFET technology to deliver fast switching speeds and low on-state resistance. The drain-source on-state resistance of 0.021Ω helps to reduce power losses. The component is logic level compatible, allowing direct interfacing with microcontrollers and other low-voltage logic devices without additional driver stages. Its three-pin configuration simplifies circuit layout, and its surface-mounted design suits automated assembly processes.

Key Features

• N channel enhancement mode MOSFET
• 30V drain-source voltage rating
• 6A continuous drain current
• 0.021Ω drain-source on-state resistance
• Logic level compatible
• Trench MOSFET technology
• Surface mount, TO-236AB (SOT23) package
• Three pins

Applications

Suited to relay drivers, high-speed line drivers, low-side load switches, and general switching circuits.

Specifications

• Channel type: N Channel
• Drain-source voltage (Vds): 30V
• Continuous drain current (Id): 6A
• Drain-source on-state resistance: 0.021Ω
• Rds(on) test voltage: 10V
• Gate-source threshold voltage (max): 1.5V
• Power dissipation: 510mW
• Maximum operating temperature: 150°C
• Package type: SOT23
• Dimensions (width x depth x height): 3.3 x 1.5 x 4.3
• Weight: 0.726 g

The component is supplied on a reel for automated assembly, supporting production line use. Its fast switching capability and efficiency make it suitable for modern electronic circuits that require compact switching components.