NEXPERIA PNP Bipolar Transistor, 60V, 600mA, 250mW, TO-236AB

The NEXPERIA PNP Bipolar Transistor is a high-performance switching transistor housed in a compact surface-mount plastic SOT23 (TO-236AB) package. Designed for reliability, this component is perfectly suited for both general-purpose switching and linear amplification applications.

This AEC-Q101 qualified transistor delivers robust electrical characteristics, including a maximum collector-emitter voltage of 60V and a continuous collector current of 600mA. It offers a maximum total power dissipation of 250mW at an ambient temperature of 25°C or below, ensuring stable operation under standard conditions. The device features a minimum DC current gain (hFE) of 100 and a transition frequency of 200MHz, providing efficient signal processing capabilities.

With a wide operating ambient temperature range spanning from -65°C to 150°C, this transistor is built to withstand demanding environments. It features a surface-mount design with 3 pins, facilitating straightforward PCB assembly. An NPN complement is also available, providing versatile pairing options for push-pull or complementary circuit configurations.

Key Specifications

• Transistor Polarity: PNP
• Collector Emitter Voltage Max: 60V
• Continuous Collector Current: 600mA
• Power Dissipation: 250mW
• DC Current Gain hFE Min: 100
• Transition Frequency: 200MHz
• Transistor Case Style: TO-236AB
• Transistor Mounting: Surface Mount
• Number of Pins: 3
• Operating Temperature Range: -65°C to 150°C
• Dimensions: 43mm x 33mm x 15mm
• Weight: 0.061g