NEXPERIA PMV37ENEAR N Channel MOSFET 60V 3.5A SOT23

The NEXPERIA PMV37ENEAR is an N Channel enhancement mode Field-Effect Transistor (FET) housed in a compact SOT23 (TO-236AB) Surface-Mounted Device plastic package. Utilising advanced Trench MOSFET technology, this component delivers efficient switching performance in a space-saving design, making it ideal for modern electronic assemblies.

This MOSFET is engineered for versatility, suitable for a wide range of applications including relay drivers, high-speed line drivers, low-side load switches, and general switching circuits. Its logic-level compatible gate drive simplifies interface with microcontrollers and other low-voltage logic circuits. The device is also AEC-Q101 qualified, ensuring reliability for automotive-grade applications.

With a drain-source voltage rating of 60V and a continuous drain current of 3.5A, the PMV37ENEAR offers robust performance for various power management tasks. The drain-source on-state resistance is 0.049 ohm (at Vgs = 10V), promoting efficient power handling. Additionally, the device features built-in ElectroStatic Discharge (ESD) protection of more than 2 kV HBM (class H2), enhancing its durability during handling and operation.

Key Specifications:

• Channel Type: N Channel
• Drain Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 3.5A
• Drain Source On State Resistance (Rds(on)): 0.049 ohm (at Vgs = 10V)
• Gate Source Threshold Voltage (Max): 1.7V
• Power Dissipation: 710mW
• Transistor Case Style: TO-236AB (SOT23)
• Mounting Type: Surface Mount
• No. of Pins: 3
• Operating Temperature (Max): 175°C

This component is supplied in a tape and reel packaging, suitable for automated assembly processes. Its small footprint and high performance make it a reliable choice for space-constrained and high-efficiency designs.