Nexperia P-Channel Power MOSFET 20V 4A SOT-23

The Nexperia P-Channel Power MOSFET is a 20V, 4A enhancement-mode transistor supplied in a compact SOT-23 surface-mount package.

Overview

This P-channel power MOSFET uses advanced Trench MOSFET technology and is designed for efficient operation in a space-saving, surface-mount package. It is suited to designs where board space is limited.

Key Features

• Low on-state resistance: Rds(on) of 0.036 ohm at a 4.5V gate-source voltage, which reduces power loss and heat generation when switched on.
• Continuous drain current: 4A (Id).
• Drain-source voltage: Up to 20V (Vds).
• High-speed switching: Designed for fast switching in pulse-width modulation (PWM) and other high-frequency circuits.
• Low gate drive: Maximum gate-source threshold voltage of 700mV, compatible with low-voltage logic and microcontroller outputs.
• Wide operating temperature: Junction temperature range from -55°C to 150°C.
• Compact package: SOT-23 surface-mount package with 3 pins.

Applications

The MOSFET is suited to power management and switching roles, including relay and solenoid drivers for inductive loads, high-side load switches for controlling power rails in battery-operated devices and distribution systems, and DC-DC converters and power supplies where synchronous rectification is used.