Nexperia SMD P-Channel Power MOSFET, 60V 2.2A, SOT-23
AEC-Q101 qualified Nexperia P-Channel MOSFET. 60V, 2.2A, low Rds(on) in SOT-23 package for relay drivers & load switches.
The Nexperia PMV100EPAR is a P-Channel enhancement mode field-effect transistor (FET) housed in a compact SOT-23 (TO-236AB) surface-mount plastic package. Engineered with advanced Trench MOSFET technology, this component delivers very fast switching performance, making it an ideal choice for efficient power management and control circuits.
This logic-level compatible MOSFET is AEC-Q101 qualified, ensuring it meets stringent automotive-grade reliability standards for demanding applications. Its robust design supports a continuous drain current of 2.2A and a drain-source voltage of 60V, with a low on-state resistance (Rds(on)) of 0.13 ohm, which helps to minimise power losses and heat generation.
Key Features & Applications
- Versatile Switching: Perfectly suited as a high-side load switch, relay driver, and high-speed line driver in various switching circuits.
- Fast Performance: The Trench MOSFET technology enables very fast switching speeds, critical for modern, high-frequency applications.
- Automotive Grade: Its AEC-Q101 qualification makes it a reliable choice for automotive electronics and other harsh environments.
- Compact Design: The small SOT-23 footprint saves valuable board space in densely packed electronic assemblies.
With a maximum power dissipation of 710mW and an operating temperature range extending up to 175°C, this MOSFET offers both durability and performance. It is supplied in tape and reel packaging compatible with standard automated assembly processes.
- Relay driver circuits
- High-speed line drivers
- High-side load switches
- General switching circuits
- Channel Type: P Channel
- Drain Source Voltage (Vds): 60V
- Continuous Drain Current (Id): 2.2A
- Drain Source On-State Resistance (Rds(on)): 0.13 ohm
- Test Voltage for Rds(on): 10V
- Gate Source Threshold Voltage (Max): 2.5V
- Power Dissipation: 710mW
- Transistor Case Style: SOT-23 (TO-236AB)
- Transistor Mounting: Surface Mount
- Number of Pins: 3
- Operating Temperature Max: 175°C
- Technology: Trench MOSFET
- Qualification: AEC-Q101
- Drain Source On State Resistance: 0.13ohm
- Rds(on) Test Voltage: 10V
- of Pins: 3Pins
- SVHC: No SVHC (25-Jun-2025)
Always follow local regulations and product guidance.
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