NEXPERIA P Channel Power MOSFET, 50V, 180mA, SOT-23
NEXPERIA BSS84AK P Channel Power MOSFET, 50V, 180mA. AEC-Q101 qualified with 1kV ESD protection. Ideal for relay and line drivers.
The NEXPERIA BSS84AK is a P-channel enhancement mode Field-Effect Transistor housed in a surface mount plastic package, utilising advanced Trench MOSFET technology. This component is logic-level compatible and features very fast switching capabilities, making it an efficient choice for a variety of electronic circuits.
Designed for reliability, the BSS84AK is AEC-Q101 qualified and offers up to 1kV ESD protection, ensuring robust performance in demanding environments. It is particularly suitable for use as a relay driver and high-speed line driver in industrial applications.
Key Specifications
- Channel Type: P Channel
- Drain Source Voltage (Vds): 50V
- Continuous Drain Current (Id): 180mA
- Drain Source On State Resistance: 7.5 ohm
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 1.6V
- Power Dissipation: 350mW
- Transistor Case Style: SOT-23
- Transistor Mounting: Surface Mount
- No. of Pins: 3 Pins
- Operating Temperature Max: 150°C
This MOSFET combines compact dimensions with high-performance characteristics, providing a dependable solution for your surface mount assembly needs.
- For relay drivers
- For high-speed line drivers
- For industrial applications
- Channel Type: P Channel
- Drain Source Voltage (Vds): 50V
- Continuous Drain Current (Id): 180mA
- Drain Source On State Resistance: 7.5 ohm
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 1.6V
- Power Dissipation: 350mW
- Transistor Case Style: SOT-23
- Transistor Mounting: Surface Mount
- No. of Pins: 3 Pins
- Operating Temperature Max: 150°C
- Qualification: AEC-Q101
- ESD Protection: Up to 1kV
- Weight: 0.181 grams
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- of Pins: 3Pins
- SVHC: No SVHC (04-Feb-2026)
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