NEXPERIA P Channel Power MOSFET, 60 V, 160 mA, 2.5 ohm, SOT-23

The NEXPERIA P-channel enhancement mode Field-Effect Transistor (MOSFET) utilises advanced vertical D-MOS technology within a robust plastic package. Designed to deliver reliable and efficient performance, this component is specifically engineered for high-frequency applications, thanks to its exceptionally fast switching characteristics.

Key Features

• Logic-level compatible for easy integration into low-voltage circuits
• Very fast switching speeds suitable for high-frequency operation
• Low threshold voltage ensures efficient turn-on performance

With a maximum drain-source voltage of 60 V and a continuous drain current of 160 mA, this MOSFET is perfectly suited for low-power switching tasks. The device features a drain-source on-state resistance of 2.5 ohms at a test voltage of 10 V, alongside a maximum power dissipation of 417 mW. Housed in a compact 3-pin SOT-23 surface mount package, it provides a space-saving solution for automated PCB assembly. The component operates reliably across a wide range of conditions, up to a maximum temperature of 150°C. Product dimensions are 43 mm in height, 33 mm in width, and 15 mm in depth, with a lightweight design of just 0.318 grams.