Nexperia P-Channel Power MOSFET 30V 230mA 4.1 ohm SOT-23

The Nexperia P-Channel Power MOSFET is a 30V device rated at 230mA, housed in a compact SOT-23 surface-mount plastic package. It is a P-channel enhancement-mode power MOSFET that utilises Trench MOSFET technology to support efficient switching in electronic designs. It is designed for very fast switching, making it a suitable choice for high-speed circuit designs where timing and efficiency are critical.

Key Features

• Robust electrostatic discharge (ESD) protection rated up to 2 kV, helping to safeguard the device during handling and operation
• Low threshold voltage for enhanced compatibility with low-voltage control signals
• AEC-Q101 qualified for the environmental and reliability standards required in automotive electronics
• Operating junction temperature range from -55°C to +150°C

Applications

This MOSFET is suited for use as a relay driver, providing switching control for electromechanical relays. It is also an effective low-side load switch for managing power to various circuit sections. Its fast-switching capability is leveraged in high-speed line driver circuits and general switching circuit applications.

Its rugged construction and AEC-Q101 qualification make it a dependable component for automotive systems, where durability is paramount. It is also valuable in power management modules for efficient voltage regulation and switching, as well as in industrial control and automation applications that require stable operation under challenging conditions.

Specifications

• Channel Type: P-Channel
• Voltage: 30V
• Current: 230mA
• Resistance: 4.1 ohm
• Package: SOT-23 surface-mount plastic
• ESD Protection: Up to 2 kV
• Junction Temperature Range: -55°C to +150°C
• Dimensions (Width x Depth x Height): 3.3 x 1.5 x 4.3

Its combination of fast switching, ESD protection and AEC-Q101 qualification makes it a practical choice for compact designs that require reliable switching performance.