NEXPERIA NX2301P P-Channel MOSFET, 20V, 2A, SOT-23
NEXPERIA NX2301P P-Channel MOSFET, 20V, 2A, SOT-23 package. Low RDSon, fast switching, AEC-Q101 qualified for automotive use.
The NEXPERIA NX2301P is a P-channel enhancement mode field-effect transistor (FET) designed for high-performance, low-voltage applications. Utilising advanced Trench MOSFET technology, this surface-mounted device (SMD) offers a remarkably low on-state resistance (RDSon) of just 0.12 ohm when driven at 4.5V, making it exceptionally efficient for power management tasks.
Rated for a drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 2A, it provides reliable switching capabilities in a compact SOT-23 package. A key feature is its 1.8V RDSon rating, which is optimised for low-voltage gate drive systems, enabling efficient operation directly from logic-level signals. This, combined with very fast switching characteristics, minimises power losses and improves overall system efficiency.
The device is AEC-Q101 qualified, confirming its suitability for demanding automotive applications where reliability under harsh conditions is paramount. Its robust design supports a maximum power dissipation of 400mW and can operate at temperatures up to 150°C.
Ideal Applications
This MOSFET is perfectly suited for a variety of modern electronic designs. Its performance characteristics make it an excellent choice for audio amplification circuits, precision signal processing paths, and sophisticated power management systems, including DC-DC converters and load switches. The combination of small form factor, high efficiency, and automotive-grade qualification offers designers a versatile component for space-constrained and reliability-critical designs alike.
- Audio circuits and amplification
- Signal processing applications
- Power management systems (e.g., DC-DC converters, load switches)
- Automotive electronic modules (AEC-Q101 qualified)
- Technology: Trench MOSFET
- Channel Type: P Channel
- Drain-Source Voltage (Vds): 20 V
- Continuous Drain Current (Id): 2 A
- Drain-Source On-State Resistance (RDSon): 0.12 ohm
- RDSon Test Voltage: 4.5 V
- Gate-Source Threshold Voltage (Max): 750 mV
- Power Dissipation: 400 mW
- Package Type: SOT-23 (Surface Mount)
- Number of Pins: 3
- Operating Temperature Max: 150°C
- Qualification: AEC-Q101 Qualified
- Package Dimensions: 3.3mm (Width) x 1.5mm (Depth) x 1.0mm (Height) approx.
- Drain Source On State Resistance: 0.12ohm
- Transistor Case Style: SOT-23
- Transistor Mounting: Surface Mount
- of Pins: 3Pins
- SVHC: No SVHC (25-Jun-2025)
Always follow local regulations and product guidance.
Free standard delivery on UK mainland orders. Express delivery options and international shipping available at checkout.
We offer a 30-day money-back guarantee on most products. For faulty items, contact us within 14 days for a replacement or refund.
View Full Delivery & Returns PolicySecure Transactions
We take the utmost care with your payment and personal details. Our website employs advanced encryption technology, including Secure Sockets Layer (SSL), to protect your information during transmission. You can verify a secure connection by looking for 'https' and a locked padlock in your browser.
Cookie Policy
Cookies enhance your shopping experience by keeping track of your basket and remembering you when you return. We also use banner advertising based on your browsing history to present products of potential interest.
Security Warning
Beware of phishing scams! We will never ask for personal details via email. If such information is required, we'll request you to contact us by phone. If you receive an email requesting sensitive information, do not respond and let us know immediately.
Recommended Products
Similar Products
You may like
