NEXPERIA Bipolar Transistor Array NPN 45V 100mA 250mW
NEXPERIA dual NPN bipolar transistor array, 45V, 100mA in SOT-363 package. Ideal for general-purpose switching and amplification.
The NEXPERIA Bipolar Transistor Array is a high-performance surface mount component designed for general-purpose switching and amplification applications. Enclosed in a compact SOT-363 (SC-88) package, this dual NPN transistor array is engineered to optimise your circuit design by reducing both the number of components required and the overall board space.
Featuring closely matched current gain between transistors, this array ensures consistent and reliable performance across your circuits. A significant advantage of this design is the elimination of mutual interference between the integrated transistors, guaranteeing independent operation. Additionally, the component is characterised by low collector capacitance and a low collector to emitter saturation voltage, enhancing efficiency in switching operations.
With a maximum collector to emitter voltage of 45V and a continuous collector current of 100mA, this transistor array is well-suited for a variety of electronic tasks. It offers a DC current gain (hFE) of 200 and can handle a power dissipation of 250mW per transistor. The device operates reliably across a wide ambient temperature range, from -65°C up to 150°C, making it robust enough for demanding environments.
Key Specifications
- Transistor Polarity: Dual NPN
- Package: SOT-363 (SC-88)
- Mounting Type: Surface Mount
- Collector Emitter Voltage Max: 45V
- Continuous Collector Current: 100mA
- DC Current Gain (hFE): 200
- Power Dissipation: 250mW per transistor (220mW NPN)
- Transition Frequency: 100MHz
- Collector Emitter Saturation Voltage: 300mV at 100mA
- Operating Temperature Range: -65°C to 150°C
- Number of Pins: 6
This NEXPERIA transistor array offers a practical and efficient solution for compact, high-density circuit designs requiring dependable switching and amplification.
- For general purpose switching
- For general purpose amplification
- For high-density circuit designs
- Transistor Polarity: Dual NPN
- Package / Case Style: SOT-363 (SC-88)
- Mounting Type: Surface Mount
- Collector Emitter Voltage Max NPN: 45V
- Continuous Collector Current NPN: 100mA
- DC Current Gain hFE Min NPN: 200hFE
- Power Dissipation: 250mW per transistor
- Power Dissipation NPN: 220mW
- Collector Emitter Saturation Voltage: 300mV at 100mA collector current
- Transition Frequency NPN: 100MHz
- Operating Temperature Max: 150°C
- Ambient Temperature Range: -65°C to 150°C
- Number of Pins: 6
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- Weight: 16.148 grams
- Gain hFE: 200hFE
- Transistor Case Style: SC-88
- of Pins: 6Pins
- Transistor Mounting: Surface Mount
- SVHC: No SVHC (25-Jun-2025)
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