NEXPERIA N Channel SMD Power MOSFET, 40V, 2.1A, SOT-23
NEXPERIA N-channel SMD power MOSFET (40V, 2.1A) in SOT-23 package. AEC-Q101 qualified, 1kV ESD protected. Ideal for relay driving & switching.
The NEXPERIA N-Channel Enhancement Mode Field-Effect Transistor (FET) is a high-performance Surface-Mounted Device (SMD) housed in a compact SOT-23 (TO-236AB) plastic package. Utilising advanced Trench MOSFET technology, this transistor delivers efficient and reliable performance for a wide range of electronic applications.
Designed for versatility, this power MOSFET is logic-level compatible and features very fast switching speeds, making it an ideal choice for demanding circuit designs. It also offers robust protection with 1kV ESD protection and is AEC-Q101 qualified, ensuring suitability for automotive and other rigorous environments.
Key Features
- N-Channel enhancement mode
- Trench MOSFET technology
- Logic-level compatible
- Very fast switching
- 1kV ESD protected
- AEC-Q101 qualified
Whether you are designing switching circuits, driving relays, or implementing low-side load switches, this NEXPERIA MOSFET provides a dependable solution. Its surface-mount design allows for efficient PCB assembly, while the robust specifications ensure consistent operation up to 150°C.
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
- Channel Type: N Channel
- Drain Source Voltage Vds: 40V
- Continuous Drain Current Id: 2.1A
- Drain Source On State Resistance: 0.12ohm
- Transistor Case Style: SOT-23
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 1.6V
- Power Dissipation: 460mW
- No. of Pins: 3
- Operating Temperature Max: 150°C
- Weight: 0.049 grams
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- of Pins: 3Pins
- SVHC: No SVHC (04-Feb-2026)
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