NEXPERIA N Channel Power MOSFET, 60V, 360mA, 0.9 Ohm, SOT-23, SMD

The NEXPERIA N-channel enhancement mode Field-Effect Transistor (FET) is housed in a Surface Mounted Device (SMD) plastic package, utilising advanced Trench MOSFET technology. This power MOSFET is designed for efficient performance and reliability in a wide range of electronic applications.

Featuring very fast switching capabilities, this transistor is equipped with ESD protection up to 1.5kV, ensuring robust defence against electrostatic discharge. It is logic level compatible, making it suitable for low-voltage drive circuits, and is AEC-Q101 qualified, meaning it meets the stringent standards required for automotive applications.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 60V
• Continuous Drain Current (Id): 360mA
• Drain Source On State Resistance: 1.6 ohm
• Rds(on) Test Voltage: 10V
• Gate Source Threshold Voltage Max: 1.5V
• Power Dissipation: 420mW
• Number of Pins: 3
• Maximum Operating Temperature: 150°C
• Transistor Case Style: SOT-23
• Transistor Mounting: Surface Mount

With a compact form factor and robust build, this MOSFET is a reliable choice for power management and signal processing. The product dimensions are 43 mm in height, 33 mm in width, and 15 mm in depth, with a lightweight design of just 0.091 grams.