NEXPERIA N Channel Power MOSFET, 60V, 360mA, SOT-23, SMD
NEXPERIA N Channel Power MOSFET, 60V, 360mA, SOT-23. Logic level compatible, fast switching, AEC-Q101 qualified. Ideal for power management.
The NEXPERIA N Channel Power MOSFET is an enhancement mode Field-Effect Transistor (FET) housed in a Surface Mounted Device (SMD) plastic package. Utilising advanced Trench MOSFET technology, this component delivers reliable and efficient performance for your electronic circuits.
Designed for versatility, this MOSFET is logic level compatible, ensuring seamless integration with low-voltage control systems. It features very fast switching speeds, making it suitable for high-frequency applications. Additionally, the device includes built-in Electrostatic Discharge (ESD) protection up to 1.5kV, safeguarding the component against accidental voltage spikes. It is also AEC-Q101 qualified, meaning it meets the rigorous standards required for automotive applications.
With a drain source voltage of 60V and a continuous drain current of 360mA, this transistor is well-suited for managing power and signals. It features a drain source on-state resistance of 1.6 ohms and a maximum power dissipation of 350mW. The compact SOT-23 case style contains 3 pins and supports surface mount installation, optimising board space. It operates reliably at temperatures up to 150°C and features an MSL 1 rating, indicating unlimited floor life.
Key Specifications
- Channel Type: N Channel
- Drain Source Voltage (Vds): 60V
- Continuous Drain Current (Id): 360mA
- Drain Source On State Resistance: 1.6 ohms
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 1.1V
- Power Dissipation: 350mW
- Transistor Case Style: SOT-23
- Transistor Mounting: Surface Mount
- No. of Pins: 3
- Operating Temperature Max: 150°C
- Dimensions: 43 mm x 33 mm x 15 mm
- Weight: 0.145 grams
- Channel Type: N Channel
- Drain Source Voltage (Vds): 60V
- Continuous Drain Current (Id): 360mA
- Drain Source On State Resistance: 1.6 ohms
- Transistor Case Style: SOT-23
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 1.1V
- Power Dissipation: 350mW
- No. of Pins: 3
- Operating Temperature Max: 150°C
- ESD Protection: Up to 1.5kV
- Qualification: AEC-Q101
- MSL: MSL 1 - Unlimited
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- Weight: 0.145 grams
- of Pins: 3Pins
- SVHC: No SVHC (25-Jun-2025)
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