NEXPERIA Power MOSFET, N Channel, 60V, 350mA, 1 Ohm, SOT-23, SMD
NEXPERIA N-Channel Power MOSFET, 60V, 350mA, SOT-23. AEC-Q101 qualified with 1kV ESD protection for industrial switching circuits.
The NEXPERIA N-Channel Power MOSFET is an enhancement mode Field-Effect Transistor (FET) housed in a surface-mounted plastic package. Utilising advanced Trench MOSFET technology, this component is designed to deliver reliable and efficient performance for a variety of electronic applications.
This MOSFET is logic-level compatible and features very fast switching speeds, making it highly suitable for high-speed line drivers, low-side load switches, and general switching circuits. It offers robust protection with up to 1kV Electrostatic Discharge (ESD) protection, ensuring durability and safeguarding sensitive circuitry from voltage spikes.
Furthermore, this transistor is AEC-Q101 qualified, meaning it meets the stringent standards required for automotive applications, though it is equally well-suited for demanding industrial environments. With a maximum drain-source voltage of 60V and a continuous drain current of 350mA, it provides a solid balance of power handling and efficiency for low-power switching tasks.
Key Features
- N-Channel enhancement mode FET
- Trench MOSFET technology
- Logic-level compatible
- Very fast switching
- AEC-Q101 qualified
- Up to 1kV ESD protection
- SOT-23 surface mount package
- High-speed line driver circuits
- Low-side loadswitch applications
- Switching circuits
- Industrial applications
- Channel Type: N Channel
- Drain Source Voltage Vds: 60V
- Continuous Drain Current Id: 350mA
- Drain Source On State Resistance: 1.6 ohm
- Transistor Case Style: SOT-23
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 1.6V
- Power Dissipation: 440mW
- No. of Pins: 3
- Operating Temperature Max: 150°C
- Qualification: AEC-Q101
- Weight: 0.007 grams
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- of Pins: 3Pins
- SVHC: No SVHC (25-Jun-2025)
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