NEXPERIA N Channel Power MOSFET 30V 4.4A SOT-23

The NEXPERIA N Channel Power MOSFET is an advanced enhancement-mode field-effect transistor designed using state-of-the-art Trench MOSFET technology. Encased in a compact surface-mount plastic package, this component offers a highly efficient solution for a variety of electronic circuits. It features a low threshold voltage and exceptionally fast switching speeds, making it highly responsive and effective for dynamic power management tasks.

This MOSFET boasts an enhanced power dissipation capability of up to 1000mW, ensuring reliable performance even under demanding conditions. It operates within a wide junction temperature range of -55°C to 150°C, providing excellent stability across diverse environmental settings. With a drain source voltage of 30V and a continuous drain current of 4.4A, it delivers robust power handling for its compact size.

Key Specifications

• Channel Type: N Channel
• Drain Source Voltage (Vds): 30V
• Continuous Drain Current (Id): 4.4A
• Drain Source On State Resistance: 0.044 ohm
• Transistor Case Style: SOT-23
• Transistor Mounting: Surface Mount
• Rds(on) Test Voltage: 4.5V
• Gate Source Threshold Voltage Max: 650mV
• Power Dissipation: 490mW
• Number of Pins: 3
• Dimensions: 43 mm (H) x 33 mm (W) x 15 mm (D)
• Weight: 0.121 grams

Ideal for demanding applications, this MOSFET is perfectly suited for power management, LED lighting, and industrial systems. Its combination of low resistance and fast switching makes it a preferred choice for engineers designing efficient electronic hardware.