NEXPERIA N Channel Power MOSFET 100V 190mA SOT-23

The NEXPERIA N Channel Power MOSFET is an enhancement mode field-effect transistor utilising advanced TrenchMOS™ technology. Housed in a subminiature SOT-23 surface mount package, this transistor is designed for efficient and reliable performance in a variety of low-power switching applications.

Featuring very fast switching speeds and logic level compatibility, this MOSFET is ideally suited to modern electronic circuits where space and speed are critical. The device offers a drain-source voltage of 100V and a continuous drain current of 190mA, with a drain-source on-state resistance of 10 ohm. It provides a maximum power dissipation of 830mW and a maximum gate-source threshold voltage of 2V.

Key Specifications

• Channel Type: N Channel
• Technology: TrenchMOS™
• Drain Source Voltage (Vds): 100V
• Continuous Drain Current (Id): 190mA
• Drain Source On-State Resistance (Rds(on)): 10 ohm
• Gate Source Threshold Voltage Max: 2V
• Power Dissipation: 830mW
• Package: SOT-23
• Mounting: Surface Mount
• Operating Junction Temperature Range: -65°C to 150°C

With its compact dimensions and robust electrical characteristics, this NEXPERIA MOSFET ensures optimal performance for high-speed logic and relay driving tasks.