Nexperia Dual Trench N Channel MOSFET 60V 320mA 1 ohm SOT-363
Nexperia 60V 320mA dual N-channel trench MOSFET in SOT-363. AEC-Q101 qualified, logic-level, fast switching. Ideal for relay drivers.
The Nexperia Dual Trench N Channel MOSFET is a 60V, 320mA enhancement-mode Field-Effect Transistor (FET) designed for high-efficiency switching. Housed in a very small SOT-363 (SC-88) Surface-Mounted Device (SMD) plastic package, it utilises advanced Trench MOSFET technology to deliver reliable performance in compact circuits.
This MOSFET is logic-level compatible, ensuring seamless integration with low-voltage control systems. It features very fast switching speeds, making it highly effective for dynamic and high-frequency applications. Additionally, the device includes ESD protection up to 1.5kV, safeguarding against electrostatic discharge during handling and operation. It is also AEC-Q101 qualified, confirming its suitability for demanding automotive environments.
Key Specifications
- Channel Type: N Channel
- Drain Source Voltage (Vds): 60V
- Continuous Drain Current (Id): 320mA
- Drain Source On State Resistance: 1.6 ohm
- Power Dissipation: 280mW
- Number of Pins: 6
- Maximum Operating Temperature: 150°C
Ideal for a variety of circuit designs, this dual MOSFET is particularly well-suited for relay drivers, high-speed line drivers, low-side load switches, and general switching circuit applications. Its compact SOT-363 package allows for space-saving PCB layouts, making it an excellent choice for modern, miniaturised electronic assemblies.
- For relay drivers
- For high-speed line drivers
- For low-side load-switch applications
- For switching circuit applications
- Channel Type: N Channel
- Technology: Trench MOSFET
- Drain Source Voltage Vds N Channel: 60V
- Drain Source Voltage Vds P Channel: 60V
- Continuous Drain Current Id N Channel: 320mA
- Continuous Drain Current Id P Channel: 320mA
- Drain Source On State Resistance N Channel: 1.6 ohm
- Drain Source On State Resistance P Channel: 1.6 ohm
- Power Dissipation N Channel: 280mW
- Power Dissipation P Channel: 280mW
- Transistor Case Style: SOT-363 (SC-88)
- Mounting Type: Surface Mount
- No. of Pins: 6
- Operating Temperature Max: 150°C
- Qualification: AEC-Q101
- Special Feature: Logic-level compatible
- Special Feature: Very fast switching
- Special Feature: ESD protection up to 1.5kV
- Weight: 0.02 grams
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- of Pins: 6Pins
- SVHC: No SVHC (25-Jun-2025)
Always follow local regulations and product guidance.
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