Nexperia BCP53 PNP Bipolar Transistor 80V 1A 650mW SOT-223 SMD

The Nexperia BCP53 PNP Bipolar Transistor 80V 1A 650mW SOT-223 SMD is a PNP bipolar junction transistor with a collector-emitter voltage of -80V, a continuous collector current rating of -1A and a power dissipation of 650mW in a compact surface-mount package.

Overview

The Nexperia BCP53 is a medium-power transistor designed for industrial and power management applications. Its combination of current handling, voltage rating and power dissipation suits switching and amplification tasks in power circuits. The exposed heat-sink tab on the SOT-223 package supports heat transfer away from the silicon die and supports thermal and electrical conductivity under load.

Key Features

• Handles up to 1A continuous current with a 650mW power dissipation rating
• Exposed heat-sink tab on the SOT-223 package for improved heat transfer
• Compact surface-mount package that saves PCB space while delivering medium power capability
• Direct complement to the Nexperia BCP56 NPN transistor, which simplifies push-pull and other symmetrical circuit designs
• DC current gain (hFE) of 100 minimum for predictable amplification characteristics

Specifications

• Transistor Polarity: PNP
• Collector-Emitter Voltage (Vceo): -80V
• Continuous Collector Current (Ic): -1A
• Power Dissipation (Pd): 650mW
• DC Current Gain (hFE): 100 (Min)
• Transition Frequency (ft): 145MHz
• Package Type: SOT-223 (Surface Mount)
• Pin Count: 4 Pins
• Maximum Operating Temperature: +150

Dimensions and Weight

The recorded dimensions are 3.3 (width), 1.5 (depth) and 4.3 (height), with a product weight of 0.264 gm.

Applications

Suitable for industrial and power management applications, including switching and amplification tasks in power circuits and push-pull or other symmetrical circuit designs.

Choose the Nexperia BCP53 when a compact PNP transistor rated at 80V, 1A and 650mW is required for surface-mount power circuit designs.