
Nexperia BC856B,215 PNP bipolar transistor in SOT-23 package. -65V Vceo, -100mA collector current, 250mW power dissipation and hFE of 220.
The Nexperia BC856B,215 is a PNP bipolar junction transistor (BJT) with a maximum collector-emitter voltage of -65V, supplied in a compact SOT-23 surface-mount package.
Overview
Designed for low-current, low-voltage applications, this general-purpose transistor provides essential switching and amplification functions for a wide range of electronic circuits. It offers a DC current gain (hFE) of 220, supporting efficient signal amplification, and a transition frequency of 100MHz, which makes it suitable for moderate-speed applications.
Key Features
Electrical Ratings
Physical Details
The component uses a SOT-23 (3-pin) surface-mount package with a mounting type of Surface Mount. The listed dimensions are Width 3.3, Depth 1.5 and Height 4.3, and the weight is 0.033 g.
Choose the Nexperia BC856B,215 when a compact PNP transistor for low-current, low-voltage switching or amplification in SOT-23 surface-mount designs is required.
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