DIODES INC. N Channel Power MOSFET 200V 120mA E-Line

This N Channel Power MOSFET from DIODES INC. delivers reliable switching performance in a compact E-Line package (compatible with TO-92). It can handle a drain-source voltage of up to 200V and a continuous drain current of 120mA, making it suitable for low-power amplification and switching circuits. The device features a drain-source on-state resistance of 30Ω, ensuring efficient operation in your designs.

The transistor is housed in a molded plastic case with a UL flammability rating of 94V-0, offering robust protection and compliance with safety standards. It uses a standard through-hole mounting for easy integration onto PCBs. The gate-source threshold voltage is a maximum of 3V, and the Rds(on) test voltage is 5V. With a power dissipation of 500mW and an operating temperature range up to 150°C, this MOSFET is designed for dependable performance in a variety of electronic applications.

Key Specifications:

• Channel Type: N Channel
• Drain Source Voltage (Vds): 200V
• Continuous Drain Current (Id): 120mA
• Drain Source On-State Resistance: 30Ω
• Case Style: E-Line (TO-92 Compatible)
• Mounting Type: Through Hole
• Gate Source Threshold Voltage Max: 3V
• Power Dissipation: 500mW
• No. of Pins: 3
• Operating Temperature Max: 150°C

This component is ideal for hobbyists and professionals looking for a dependable MOSFET for their projects.