N Channel Power MOSFET 100V 2A 0.26 ohm SOT-223 Surface Mount
STMicroelectronics N-channel Power MOSFET, 100V, 2A, 0.26 ohm, SOT-223. Ideal for power management & industrial use.
This N-channel Power MOSFET is manufactured by STMicroelectronics and developed using the unique STripFET™ II Single Feature Size™ strip-based process. This advanced technology ensures an extremely high packing density, which directly contributes to the device's low ON-resistance and rugged avalanche characteristics.
By utilising fewer critical alignment steps during manufacturing, the device achieves remarkable manufacturing reproducibility, ensuring consistent performance across batches. It operates reliably within a wide junction temperature range of -55°C to 150°C, making it suitable for demanding environments.
Key Specifications
- Channel Type: N Channel
- Drain Source Voltage (Vds): 100V
- Continuous Drain Current (Id): 2A
- Drain Source On State Resistance: 0.26 ohm
- Transistor Case Style: SOT-223
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 4V
- Power Dissipation: 3.3W
- No. of Pins: 4
Designed for efficiency and reliability, this power MOSFET is an excellent choice for various power management and industrial applications. Its surface mount configuration allows for compact and automated assembly on printed circuit boards.
- Channel Type: N Channel
- Drain Source Voltage (Vds): 100V
- Continuous Drain Current (Id): 2A
- Drain Source On State Resistance: 0.26 ohm
- Transistor Case Style: SOT-223
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Gate Source Threshold Voltage Max: 4V
- Power Dissipation: 3.3W
- No. of Pins: 4
- Operating Temperature Range: -55°C to 150°C
- MSL: MSL 1 - Unlimited
- Weight: 2 grams
- Height: 43 mm
- Width: 33 mm
- Depth: 15 mm
- of Pins: 4Pins
- Operating Temperature Max: 150°C
- SVHC: No SVHC (25-Jun-2025)
Always follow local regulations and product guidance.
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