Microchip TC4427A Dual MOSFET Gate Driver 1.5A SOIC8

Microchip TC4427A Dual MOSFET Gate Driver 1.5A is a dual-channel, non-inverting, high-speed power MOSFET gate driver with 1.5A source and sink current, designed for efficient pulse transformer drive applications.

Overview

The Microchip TC4427A is a dual-channel, non-inverting, high-speed power MOSFET gate driver designed for efficient pulse transformer drive applications. Its robust 1.5A source and sink current capability supports fast and reliable switching of MOSFETs, making it suited to demanding power management and control circuits.

The device features matched leading and falling edge propagation delay times, which contribute to precise signal timing and reduced distortion in high-frequency operations. It is engineered with high latch-up resistance under all specified power and voltage conditions. The driver can withstand up to 5V of noise spiking on the ground pin and accepts up to 500mA of reverse current forced back into its outputs without damage or logic upset.

Protection and Performance

All terminals are protected against Electrostatic Discharge (ESD) up to 2kV, safeguarding the component during handling and assembly. With a typical low output impedance of 7Ω, the driver helps maintain the intended state of the MOSFET in the presence of large electrical transients. It can charge and discharge 1000pF gate capacitances in under 30 nanoseconds.

Key Features

• Dual-channel design with two independent, non-inverting driver channels
• 1.5A source and sink current for powerful gate control
• Matched rise, fall and propagation delay times for consistent timing
• ESD protection (2kV) and tolerance to negative inputs (-5V)
• Immunity to noise and reverse current
• Supply voltage from 4.5V to 18V
• Operating temperature range of -40°C to 85°C
• Surface mount SOIC8 package

Dimensions

Width 3.3, depth 1.5 and height 4.3, with a weight of 0.175 gm.

Choose the Microchip TC4427A when a dual-channel, non-inverting MOSFET gate driver with 1.5A drive current and 2kV ESD protection is required for pulse transformer drive, power management, or control circuit designs.